MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
Gps
23.5
VDD
=50Vdc,IDQ
= 1200 mA, f = 860 MHz
23
Pulse Width = 50
μsec, Duty Cycle = 2.5%
50
1
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
10
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
1
100
110100
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
24
10
0
60
100
22
21.5
20.5
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
21
18
1000
20
52
67
30
62
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
60
38
58
31 32 33 34 35 36 37
P
out
, OUTPUT POWER (dBm)
16
24
0
23
22
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
100
21
600 700
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
18
25
10
22
24
Pulse Width = 50
μsec, Duty Cycle = 2.5%
23
100 1000
VDD
=50Vdc,IDQ
= 1200 mA, f = 860 MHz
Pulse Width = 50
μsec, Duty Cycle = 2.5%
57
54
20
200 300 400 500
VDD
=40V
45 V
50 V
ηD
25_C
TC
=--30_C
85_C
Gps
19
21
20
VDD
=50Vdc,IDQ
= 1200 mA, f = 860 MHz
TC
=25_C
TJ= 150_C
0
70
40
60
50
10
30
20
η
D
,
DRAIN EFFICIENCY (%)
20
10
TJ
= 175_C
TJ
= 200_C
22.5
19.5
19
18.5
5
15
25
35
45
55
Actual
Ideal
VDD
=50Vdc,IDQ
= 1200 mA, f = 860 MHz
Pulse Width = 12
μsec, Duty Cycle = 1%
P1dB = 57.15 dBm
(519 W)
53
56
55
59
61
64
63
66
65
39 40 4241
P3dB = 57.85 dBm (610 W)
P2dB = 57.65 dBm
(582 W)
19
18
17
-- 3 0_C
25_C
85_C
Note:
Each side of device measured separately.
Note:
Each side of device measured separately.
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